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| KSD1047 KSD1047 Audio Power Amplifier DC to DC Converter * High Current Capability * High Power Dissipation * Complement to KSB817 1 TO-3P 1.Base 2.Collector 3.Emitter NPN Planar Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Collector Dissipation (TC=25C) Junction Temperature Storage Temperature Value 160 140 6 8 16 80 150 - 40 ~ 150 Units V V V A A W C C Electrical Characteristics TC=25C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(on) fT Cob tON tF tSTG * Pulse test: PW=20s Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current * DC Current Gain DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product Output Capacitance Turn ON Time Fall Time Storage Time Test Condition IC = 5mA, IE = 0 IC = 10mA, RBE = IE = 5mA, IC = 0 VCB = 80V, IE = 0 VEB = 4V, IC = 0 VCE = 5V, IC = 1A VCE = 5V, IC = 6A IC = 5A, IB = 0.5A VCE = 5V, IC = 1A VCE = 5V, IC = 1A VCB = 10V, f = 1MHz VCC = 20V IC = 1A = 10IB1 = -10IB2 RL = 20 Min. 160 140 6 Typ. Max. Units V V V 0.1 0.1 60 20 2.5 1.5 15 210 0.26 0.68 6.88 200 mA mA V V MHz pF s s s * hFE Classificntion Classification hFE1 O 60 ~ 120 Y 100 ~ 200 (c)2000 Fairchild Semiconductor International Rev. B, November 2000 KSD1047 Typical Characteristics 10 IC[mA], COLLECTOR CURRENT 8 IB = 240mA IB = 200mA IB = 160mA 1000 VCE = 5V hFE, DC CURRENT GAIN IB = 120mA 6 100 IB = 80mA 4 IB = 40mA 10 2 IB = 20mA 0 0 10 20 30 40 IB = 0 50 1 0.1 1 10 100 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 10 10 IC = 10IB IC = 10IB VCE(sat)[V], SATURATION VOLTAGE 1 V BE(sat) VBE(sat)[V], SATURATION VOLTAGE 1 10 1 0.1 VCE(sat) 0.01 0.1 0.1 0.1 1 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT 8 100 VCE = 5V 7 VCE = 5V IC[A], COLLECTOR CURRENT 6 10 5 4 3 1 2 1 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 0.1 1 10 VBE[V], BASE-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 5. Base-Emitter On Voltage Figure 6. Current Gain Bandwidth Product (c)2000 Fairchild Semiconductor International Rev. B, November 2000 KSD1047 Typical Characteristics (Continued) 1000 f = 1MHz 100 IC MAX. (Pulse) IC[A], COLLECTOR CURRENT 10 0 DC Cob[pF], CAPACITANCE m 10 s IC MAX. (DC) m 10 100 s 1 0.1 *SINGLE NONREPETITIVE PULSE TC =25[ C] o 10 1 10 100 0.01 0.1 1 10 100 VCB[V], COLLECTOR-BASE VOLTAGE VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 7. Collector Output Capacitance Figure 8. Safe Operating Area 140 120 PC[W], POWER DISSIPATION 100 80 60 40 20 0 0 25 50 o 75 100 125 150 175 TC[ C], CASE TEMPERATURE Figure 9. Collector Output Capacitance (c)2000 Fairchild Semiconductor International VCEO MAX Rev. B, November 2000 KSD1047 Package Demensions TO-3P 15.60 0.20 3.80 0.20 13.60 0.20 o3.20 0.10 9.60 0.20 4.80 0.20 1.50 -0.05 +0.15 12.76 0.20 19.90 0.20 16.50 0.30 3.00 0.20 1.00 0.20 3.50 0.20 2.00 0.20 13.90 0.20 23.40 0.20 18.70 0.20 1.40 0.20 5.45TYP [5.45 0.30] 5.45TYP [5.45 0.30] 0.60 -0.05 +0.15 Dimensions in Millimeters (c)2000 Fairchild Semiconductor International Rev. B, November 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM DISCLAIMER HiSeCTM ISOPLANARTM MICROWIRETM POPTM PowerTrench(R) QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2000 Fairchild Semiconductor International Rev. E |
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